栅压对有机薄膜场效应晶体管中载流子注入的影响  

The Grid Voltage Effect in Carrier Injection of Organic Field-effect Transistor

作　　者：胡加兴[1] 郭荣礼[1] 刘宝元[1] 

机构地区：[1]西安工业大学光电学院,陕西西安710032

出　　处：《中国西部科技》2009年第19期44-45,49,共3页Science and Technology of West China

摘　　要：采用有机半导体材料酞菁铜作为有源层,聚四氟乙烯作为绝缘层,制作了两个不同结构的有机薄膜场效应晶体管,一个是底电极结构,另一个是倒置顶电极结构。文章通过对两个器件的电特性进行对比,分析出在倒置顶电极结构下栅压对有机薄膜场效应晶体管中载流子的注入有很大的帮助。Two organic field-effect transistor with different structure were fabricated.One had the bottom structure and the other had the inverted top structure.We measured the electronic parameters of them and found the electronic parameters of the device with inverted top structure are better than the other one.The measurement shows the grid voltage can enhance the injection of carriers in the OTFT with inverted top structure.

关 键 词：栅压 有机场效应晶体管 载流子 

分 类 号：TN386[电子电信—物理电子学] TN386.01