一种高增益低噪声低功耗跨阻放大器设计与实现  

Design and Implementation of a High Gain Low Noise and Low Power Trans-Impedance Amplifier

作　　者：唐立田[1] 张海英[1] 黄清华[1] 李潇[1] 尹军舰[1] 

机构地区：[1]中国科学院微电子研究所微波器件与电路研究室,北京100029

出　　处：《电子器件》2009年第3期566-569,共4页Chinese Journal of Electron Devices

基　　金：国家自然科学基金资助(60276021);国家重点基础研究发展规划项目资助(G2002CB311901)

摘　　要：采用TSMC0.18μm CMOS工艺设计并实现了一种高增益、低噪声和低功耗跨阻放大器。针对某种实用的光电二极管,在寄生电容高达3pF的情况下,采用RGC输入、无反馈电阻的电路结构,合理实现了增益、带宽、噪声、动态范围以及低电源电压等指标间的折中。测试结果表明单端跨阻增益高达78dB·Ω,-3dB带宽超过300MHz,100MHz处的等效输入噪声电流谱密度低至6.3pA/(Hz)～(1/2),功耗仅为14.4mW。芯片面积(包括所有PAD)为500μm×460μm。A high gain, low noise and low power trans-impedance amplifier was designed and implemented using TSMC 0. 18μm CMOS technology. Aiming at some practice photodiode having a high parasitic capacitance of 3 pF, RGC input structure without feedback resistance is used to realize the good tradeoff between gain, bandwidth, noise, dynamic range and lower power voltage. Testing results indicate： the single-end trans-impedance gain is 78 dB ·Ω, the -3 dB bandwidth is beyond 300 MHz, the equivalent input current noise spectral density at 100 MHz is 6. 3 pA/√Hz, and the power dissipation is only 14. 4 mW. The die size （including all the PADs） is as small as 500 μm×460μm.

关 键 词：跨阻放大器 RGC结构 等效输入噪声电流谱密度 0.18μm CMOS工艺 

分 类 号：TN432[电子电信—微电子学与固体电子学]