Internal stress in MPCVD diamond films on the Si substrate based on XRD line shape  被引量:3

Internal stress in MPCVD diamond films on the Si substrate based on XRD line shape

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作  者:李晓伟 李翠平 高成耀 黄梦雪 杨保和 

机构地区:[1]School of Electronic and Information Engieering,Tianjin University [2]Tianjin Key Laboratory for Film Electronic and Communication Device,School of Electronics Information Engineering,Tianjin University of Technology [3]Dongping High School

出  处:《Optoelectronics Letters》2009年第4期273-275,共3页光电子快报(英文版)

基  金:supported by the National Natural Science Foundation of China(No.60576011);Key Laboratory Foundation of Tianjin(No.06TXTJJC14701);Colleges and Universities Foundation of Tianjin(No.20050519)

摘  要:The diamond films adherent to Si substrate are deposited with the microwave plasma CVD(MPCVD) at microwave powers of 6000 W and 4000 W from 6 h to 10 h,respectively,the internal stresses of the films are measured by XRD.Spectral peak shift and widening are applied to calculate the magnitudes of macro and micro stresses.The results show that the macro stress is tensile.The internal stress can be controlled by the microwave power.With the microwave power increasing,the intrinsic and macro stresses decrease,and the micro stress increases significantly.Also,it can be found that the macro and micro stresses increase with deposited time when the other conditions are the same.The diamond films adherent to Si substrate are deposited with the microwave plasma CVD (MPCVD) at microwave powers of 6000 W and 4000 W fTom 6 h to 10 h, respectively, the internal stresses of the films are measured by XRD. Spectral peak shift and widening arc applied to calculate the magnitudes of macro and micro stresses. The results show that the macro stress is tensile. The internal stress can be controlled by the microwave power. With the microwave power increasing,the intrinsic and macro stresses decrease, and the micro stress increases significantly. Also, it can be found that the macro and micro stresses increase with deposited time when the other conditions are the same.

关 键 词:X射线衍射测量 金刚石薄膜 化学汽相沉积 微波等离子体化学气相沉积法 硅衬底 内应力 宏观应力 线形 

分 类 号:TN304.055[电子电信—物理电子学]

 

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