钽催化磁控溅射法制备GaN纳米线(英文)  

Synthesis of GaN Nanowires with Tantalum Catalyst by Magnetron Sputtering

作　　者：薛成山[1] 李红[1] 庄惠照[1] 陈金华[1] 杨兆柱[1] 秦丽霞[1] 王英[1] 王邹平[1] 

机构地区：[1]山东师范大学,山东济南250014

出　　处：《稀有金属材料与工程》2009年第7期1129-1131,共3页Rare Metal Materials and Engineering

摘　　要：利用磁控溅射技术通过氨化Ga2O3/Ta薄膜,合成大量的一维单晶纤锌矿型氮化镓纳米线。用X射线衍射、扫描电子显微镜、高分辨透射电子显微镜,选区电子衍射和光致发光谱对制备的氮化镓进行了表征。结果表明:制备的GaN纳米线是六方纤锌矿结构,其直径大约20～60nm,其最大长度可达10μm左右。室温下光致发光谱测试发现363nm处的较强紫外发光峰。另外,简单讨论了氮化镓纳米线的生长机制。Single crystalline wturzite GaN nanowires were synthesized through ammoniating Ga2O3/Ta films by RF magnetron sputtering. The products were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, high-resolution transmission electron microscopy （HRTEM）, selected-area electron diffraction （SAED） and photoluminescence （PL）. The results show that the nanowires have a hexagonal wurtzite structure with diameters ranging from 20 nm to 60 nm and lengths typically up to 10 μm. The PL spectrum exhibits a strong UV light emission at 363 nm. The growth mechanism of the crystalline GaN nanowires is discussed briefly.

关 键 词：纳米结构 氮化物 溅射 

分 类 号：TB383.1[一般工业技术—材料科学与工程]