磁控溅射沉积参数对硼碳氮薄膜沉积速率的影响  

Effects of deposition parameters on deposition rate of B-C-N film prepared by magnetron sputtering

作　　者：徐淑艳[1,2] 马欣新[2] 唐光泽[2] 孙明仁[2] 

机构地区：[1]东北林业大学森林持续经营与环境微生物工程黑龙江省重点实验室,黑龙江哈尔滨150040 [2]哈尔滨工业大学材料科学与工程学院,黑龙江哈尔滨150001

出　　处：《金属热处理》2009年第7期31-33,共3页Heat Treatment of Metals

摘　　要：利用直流磁控溅射技术制备了三元硼碳氮(B-C-N)薄膜,通过改变靶功率、基体偏压、沉积温度和励磁线圈电流,在相同沉积时间内得到不同厚度的薄膜。采用纳米压入仪分析了沉积参数改变对B-C-N薄膜沉积速率的影响规律。结果表明,在低靶功率和高励磁电流的条件下沉积的薄膜,随着靶功率和励磁电流的增加薄膜沉积速率呈线性增长;薄膜的沉积速率随基体偏压的增加呈抛物线状下降;薄膜的沉积速率受基体是否升温影响很大,而受基体所加温度大小影响较小。Boron-carbon-nitrogen（ B-C-N ）ternary fihns were deposited by DC magnetron sputtering. The films with various thicknesses were obtained within the same deposition time by varying process parameters, such as target power, bias, deposition temperature and coil current. The effects of processing parameters on deposition rate of the B-C-N film were studied using a nano-indenting device. The results show that the deposition rate of the B-C-N film prepared under the condition of lower target power and higher coil current increases linearly with the increasing of the target power and the coil current. The deposition rate of the B-C-N fihn decreases deferring parabolic to law with the increasing of the substrate bias. Whether or not to heat the substrate is more important than the substrate temperature for the deposition rate of the B-C-N film.

关 键 词：硼碳氮(B-C-N)薄膜 工艺参数 沉积速率 

分 类 号：TG156.99[金属学及工艺—热处理]