表面钝化对Ge MOS电容可靠性的影响  

Effects of Surface Passivation on Reliability of Ge MOS Capacitors

作　　者：邹晓[1] 徐静平[2] 

机构地区：[1]江汉大学机电系,武汉430056 [2]华中科技大学电子科学与技术系,武汉430074

出　　处：《微电子学》2009年第4期563-566,共4页Microelectronics

基　　金：国家自然科学基金资助项目(60776016)

摘　　要：通过NO、N2O对Ge衬底进行表面钝化,然后采用反应磁控共溅射方法制备HfTiN薄膜,并利用湿N2气氛退火,将HfTiN转化为HfTiON高k栅介质。研究了表面钝化对Ge MOS器件性能的影响。实验结果表明,湿NO表面钝化能生长高质量GeOxNy界面层,有效降低MOS电容的栅极漏电流,增强器件的可靠性。Surface of Ge substrate was passivated with NO and N2O. HfTiN film prepared using reactive co-sputtering was annealed by wet N2, and transformed into HfTiON high-k gate dielectric. Effect of surface passivation on performance of Ge MOS devices was studied. Results indicated that, with wet NO surface passivation, high-quality GeOxNy interface could be obtained, efficiently decreasing gate leakage and enhancing reliability of Ge MOS devices.

关 键 词：Ge MOS HfTiON 表面钝化 界面层 

分 类 号：TN305.5[电子电信—物理电子学] TN386.1