微晶硅薄膜带隙态及微结构的研究  

Gap states and microstructure of microcrystalline silicon thin films

作　　者：彭文博[1] 刘石勇[1] 肖海波[1] 张长沙[1] 石明吉[1] 曾湘波[1] 徐艳月[2] 孔光临[1] 俞育德[1] 

机构地区：[1]中国科学院半导体研究所材料科学重点实验室,北京100083 [2]中国农业大学应用物理系,北京100083

出　　处：《物理学报》2009年第8期5716-5720,共5页Acta Physica Sinica

基　　金：国家重点基础研究发展计划(批准号:2006CB202604);国家自然科学基金(批准号:60576036)资助的课题~~

摘　　要：研究了氢化微晶硅薄膜费米能级以上的带隙态密度分布与薄膜微结构关系.采用拉曼谱和红外谱表征不同H稀释比制备的微晶硅薄膜的微结构.薄膜带隙态密度分布由调制光电流的相移分析技术测得.采用三相模型(非晶相、晶相和界面相)分析了薄膜带隙态密度与薄膜微结构的关系.结果表明,材料的带隙态密度随着界面相的增加而增加,当界面体积分数达到最大时,薄膜的带隙态密度也最大,即材料的带隙态密度与界面体积分数正相关.The density of states （DOS） above Fermi level of hydrogenated microcrystalline silicon （μc-Si： H） films is correlated to the material microstructure. We use Raman scattering and infrared absorption spectra to characterize the structure of the films made with different hydrogen dilution ratios. The DOS of the films is examined by modulated photocurrent measurement. The results have been accounted for in the framework of a three-phase model comprised of amorphous and crystalline components, with the grain boundary as the third phase. We observed that the DOS increases monotonically as the grain boundary volume fractions fgb is increased, which indicates a positive correlation between the DOS and the grain boundary volume fraction.

关 键 词：带隙态 界面相 微晶硅 调制光电流 

分 类 号：O484.1[理学—固体物理]