介电/半导体功能集成薄膜的制备和特性调控  

The preparation and properties of the dielectric/semiconductor functional integrated thin films

作　　者：何子均[1] 肖定全[1] 朱建国[1] 

机构地区：[1]四川大学材料科学与工程学院,四川成都610064

出　　处：《功能材料》2009年第8期1240-1244,共5页Journal of Functional Materials

基　　金：国家自然科学基金面上资助项目(50572066);重大国际合作资助项目(50410179);国家基础研究计划资助项目(61363);教育部博士点基金资助项目(20080610020)

摘　　要：介电/半导体功能集成薄膜,主要是指将具有电、磁、声、光、热等功能特性的介电功能材料(主要是氧化物类介电功能材料)与硅、砷化镓或氮化镓等典型半导体类功能材料,以单层薄膜或多层薄膜的形式生长(甚至外延生长)在一起而形成的人工新材料,这类新材料有可能具有多功能一体化和功能特性之间的相互调制及耦合等特点,可望在新型电子和光电子器件中获得应用。介绍了介电/半导体功能集成薄膜产生的背景;从集成铁电薄膜与器件、HK/半导体集成薄膜与器件以及极性氧化物/GaN功能集成薄膜与器件等3个方面,分别介绍了介电/半导体功能集成薄膜的应用;概括介绍了介电/半导体功能集成薄膜的制备方法及特性调控。Dielectric/semiconductor functional integrated film is a new kind of artificial material, which is the combination of dielectric functional materials （mainly oxides） possessing the electrical, magnetic, acoustical, optical, or thermal properties grown with functional semiconductor materials of silicon, gallium arsenide or gallium nitride forming single-layer films or multi-layer films （or even epitaxial films）. Such a new kind of materials is likely to have multi-functional characteristics and expected to be applied in new electronic and optoelectronic devices. This paper describes the background of dielectric/semiconductor functional integrated thin films; introduces the applications of the dielectric/semiconductor functional integrated thin films from three points of view： the ferroelectric integrated thin films and devices, HK/semiconductor thin films and devices, and the integrated thin films of polar oxides/GaN and devices; and introduces the technique for preparing the dielectric/ semiconductor functional integrated thin films and the methods for the characterization of these films.

关 键 词：介电/半导体薄膜 功能集成薄膜与器件 集成铁电薄膜 极性氧化物 GAN 

分 类 号：TM283[一般工业技术—材料科学与工程]