低能氮离子注入固态甘氨酸剩余产物的研究  

Study of residual products of glycine implanted with low energy nitrogen ions

作　　者：韩建伟[1] 余增亮[1] 

机构地区：[1]中国科学院等离子体物理研究所

出　　处：《核技术》1998年第8期465-469,共5页Nuclear Techniques

摘　　要：采用２０ｋｅＶＮ＋注入固态甘氨酸（Ｇｌｙ）薄膜。对注入样品的ａ粒子透射能谱以及样品溶于水后溶液的电导率和氨基含量的测量，揭示了低能离子注入的损伤作用具有饱和性。ＸＰＳ测量表明低能Ｎ＋注入Ｇ１ｙ后形成了多种损伤产物，其中Ｃ、Ｎ元素的结合能变化较大，而Ｏ元素所处的化学环境变化很小。Solid state glycine(Gly) films were implanted with 20 keV N+ ions. Then theinduced damages were studied by the measurements of electric conductivity, aminocontent in aqueous solution and α- particle transmission spectra. It is shown thatthe amount of damage products increases with increasing implantation dose and thendecreases after reaching a peak. The XPS data revealed that several damage productswere formed in which C and N elements have different binding energies that those inunimplanted glycine.

关 键 词：离子注入 注入损伤 甘氨酸 低能氮离子 生物分子 

分 类 号：Q517.02[生物学—生物化学] Q691