基于钴硅化物电迁移现象的电熔丝器件的优化设计与研究  

Based on the cobalt silicides electric wire transfer phenomena of fused the optimization design and research devices

作　　者：林昆[1] 何波涌[1] 

机构地区：[1]上海交通大学微电子学学院,上海200240

出　　处：《微计算机信息》2009年第23期218-219,242,共3页Control & Automation

摘　　要：设计了一种完全兼容现有0.18μm标准CMOS工艺的,利用电迁移现象的,价格低廉的电熔丝器件结构。结果表明,在该结构下,通过优化参数,所获得的eFUSE器件结构,熔断后电阻高达107欧姆数量级,熔断率高达99%,解决了传统结构下中熔丝熔断后电阻太小,局部过热可能产生爆裂的问题。A new Electrically Programmable Fuse （eFUSE） device structure based in electromigration, completely compactable with present 0.18μm standard CMOS process, and low price, has been developed. The result shows that, through the optimize of all the parameters, we can obtain a eFUSE device structure, whose resistance is about 10^7 ohm, and the completely programmed rate is 99%, overcoming the problems in the traditional eFUSE structure.

关 键 词：电编程熔丝 电迁移 CMOS集成电路 冗余技术 硅化物 

分 类 号：TN389[电子电信—物理电子学]