影响InN材料带隙的几个关键问题  

Some Key Questions Influencing Band Gap of InN Materials

作　　者：董少光[1] 李炳乾[1] 

机构地区：[1]佛山科学技术学院光电子与物理学系,佛山528000

出　　处：《材料导报》2009年第15期82-87,共6页Materials Reports

基　　金：广州市LED工业研究开发基地研发项目

摘　　要：确定了InN材料的带隙值并研究了影响InN材料带隙变化的导带电学结构和几个关键因素,以解释当前用不同方法生长不同质量的InN材料时出现的各种不同带隙值。用光致发光、光吸收和光调制反射方法测量确定InN材料的带隙值约为0.7eV;探讨了InN材料带隙与温度的函数关系,并分析了影响InN材料带隙的导带电学结构和有关因素。影响InN材料带隙的主要因素有Moss-Burstein效应、深能级俘获现象以及N∶In化学计量比等,得出在不同质量样品和不同生长条件下,3种因素均影响InN材料的带隙值,但所起的作用却不尽相同。The band gap value of InN materials is confirmed, some key factors and the electrical structure of conduction band influencing the difference of band gap value of InN materials are investigated, so that the different band gap value of different quality InN materials grown by all kinds of growth methods at present are explained. By photolumineseence, photo absorption and photo modulation reflectance, the band gap value of InN materials is about 0. 7 eV, the function of temperature and the band gap of InN materials is discussed; then the electrical structure of conduction band and some relative factors that affecting the band gap value of InN materials are analyzed. The major factors are as follow： Moss-Burstein effect, deep level trapping phenomenon and N ~ In stoichiometry etc. The conclusion is that the band gap value of InN materials all are affected by three factors under different quality samples and different growth conditions, but the respective role is not equal.

关 键 词：InN材料 带隙 Moss-Burstein效应 深能级 化学计量 

分 类 号：TN304.23[电子电信—物理电子学]