基于相变存储器的相变存储材料的研究进展  

Research Progress on Phase Change Materials for Phase Change Memory

作　　者：汪昌州[1] 翟继卫[1] 姚熹[1] 

机构地区：[1]同济大学功能材料研究所,上海200092

出　　处：《材料导报》2009年第15期96-102,共7页Materials Reports

基　　金：国家高技术研究发展计划(863计划)重点项目(2008AA031402)

摘　　要：相变存储器具有非易失性、循环寿命长、元件尺寸小、功耗低、多级存储、与现有集成电路工艺相兼容等诸多优点,被认为是最具潜力的下一代存储器。简要介绍了相变存储材料的工作原理和对相变存储材料的性能要求,综述了近年来国内外在相变材料存储性能的优化、存储机理以及面临的关键问题等方面的最新研究成果,最后展望了相变存储材料的研究和发展趋势。Phase change memory is considered to be one of the most potential candidates for the next generation memories because of its advantages, such as nonvolatility, high cycling capability, small cell size, low cell energy consurnption, multilevel storage and compatibility with modem integrated circuit technology. In this paper, the basic principle of operation and the performance requirements of phase change materials are briefly introduced. Latest experimental and theoretical results on the improvement in the storage properties and the mechanism, as well as the existing problems of phase change materials are summarized. Finally the development trend of phase change materials is prospected.

关 键 词：相变存储器 相变存储材料 Ge2Sb2Te5 

分 类 号：TP333[自动化与计算机技术—计算机系统结构] TN492[自动化与计算机技术—计算机科学与技术]