Mn掺杂Ga_2O_3薄膜的结构及光吸收性能研究  

Investigation on Microstructure and Photo-absorption Property of Mn-doped Ga_2O_3 Thin Films

作　　者：胡帆[1] 晁明举[1] 梁二军[1] 姜雅丽[1] 

机构地区：[1]郑州大学物理工程学院材料物理教育部重点实验室,郑州450052

出　　处：《材料导报》2009年第16期16-18,21,共4页Materials Reports

基　　金：河南省教育厅自然科学研究计划(2006140009)

摘　　要：采用磁控溅射法在Si(111)和玻璃衬底上制备出不同Mn掺杂含量的Ga2O3薄膜,使用扫描电子显微镜、电子能谱仪、X射线衍射仪、紫外-可见分光光度计等对Mn掺杂Ga2O3薄膜的表面形貌、结晶特性和光吸收性能进行了研究。结果表明,适量掺杂Mn可抑制薄膜的晶格膨胀,促进Ga2O3薄膜晶粒的定向生长,得到尺寸分布较均匀的多面体晶粒。Mn掺杂使Ga2O3价带顶向带隙延伸,光学带隙变窄,吸收边红移,近紫外区吸收增强。Mn-doped Ga2O3 thin films with different contents Mn-doping are deposited on Si（111） and glass substrates by rnagnetron sputtering method. The surface morphology, microstructure and photo-absorption property of the deposited films are analyzed by SEM, EDS, XRD and UV-vis spectrophotometer. The results indicate that a proper amount of Mn-doping to the Ga2O3 thin films can inhibit the grain from expanding, induce the crystallization directional growing and then form polyhedral grain. Moreover, Mn-doping to the Ga2O3 thin films causes the generation of extra energy level above the valenceband of Ga2O3. Thus, the Mn-doped Ga2O3 films have narrower bandgap, resulting in the red shift of absorption edge and the increase in absorptivity in near ultraviolet band.

关 键 词：Ga2O3薄膜 MN掺杂 磁控溅射 微观结构 光吸收性能 

分 类 号：O643[理学—物理化学]