硅单晶中的氢催化氧沉淀  

HYDROGEN CATALYZED OXYGEN PRECIPITATION IN CRYSTALLINE SILICON

作　　者：李怀祥[1,2,3] 薛成山[1,2,3] 周武 陈鲁生 刘桂荣[1,2,3] 陈燕生 

机构地区：[1]山东师范大学半导体研究所 [2]山东师范大学化学系 [3]北京科技大学理化学系

出　　处：《山东师范大学学报（自然科学版）》1998年第3期271-274,共4页Journal of Shandong Normal University(Natural Science)

基　　金：国家自然科学基金

摘　　要：红外光谱法研究了硅单晶中的氢催化氧沉淀．氧含量为６×１０１７ａｔｏｍｓ·ｃｍ－３的直拉硅（ＣＺ—Ｓｉ）经氢气氛下区熔再成晶后，间隙氧浓度下降约２０倍．红外光谱测量１２３０ｃｍ－１吸收带结果表明，６５０～８５０℃热处理同样的时间，区熔后样品比原直拉硅样品含有更多的氧沉淀，这是氢催化的结果．Precipitation of oxygen has been studied by annealing and measuring infrared spectra with a Czochralski silicon recrystallized in a hydrogen atmosphere by the floating-zone technique. The concentration of interstitial oxygen in the recrystallized silicon is only 3.5×10 16 atoms·cm -3 , about 20 times lower than that in the as-grown CZ silicon. But more oxygen precipitates in the recrystallized silicon than in the as-grown CZ silicon have been observed after annealing for 4 hours in the temperature range of 650～850 ℃. A dissolution of the oxygen precipitates formed by hydrogen catalysis occurs after a post-heating treatment of 1000 ℃ 6 h and a neutron transmutation doping (NTD) treatment can retard the dissolution.

关 键 词：氧沉淀 氢催化 硅 单晶 

分 类 号：TN304.12[电子电信—物理电子学]