靶功率和基体偏压对BCN薄膜成分及结构的影响  

Effect of Target Power and Bias on the Composition and Microstructure of BCN Films

作　　者：徐淑艳[1,2] 马欣新[2] 唐光泽[2] 孙明仁[2] 

机构地区：[1]东北林业大学森林持续经营与环境微生物工程黑龙江省重点实验室,哈尔滨150040 [2]哈尔滨工业大学材料科学与工程学院,哈尔滨150001

出　　处：《中国表面工程》2009年第4期26-30,共5页China Surface Engineering

摘　　要：利用直流磁控溅射技术制备了三元硼碳氮(BCN)薄膜,通过改变靶功率(70 W和210 W)和基体偏压(-50V～-400 V)得到不同成分和组织结构的薄膜。采用X射线光电子能谱仪和傅立叶红外光谱仪分析了薄膜的成分和结构。结果表明:靶功率增加使得薄膜成分发生改变,而基体偏压改变对薄膜中各元素的原子百分含量几乎没有影响;基体偏压的增加会引起高能粒子对基体的轰击作用增强,有利于薄膜中B-N键的形成,而且轰击能量越高越有利于sp^3杂化的B-N键形成。BCN films were deposited by DC magnetron sputtering, and the films with different contents and structures were prepared by changing target power and bias in this paper. The composition and bonding structure of BCN films were studied by X-ray photoelectron spectroscopy （XPS） and Fourier transform infrared spectroscopy （FTIR）. The results indicate that the element contents of BCN films change with the increasing of the target power, and the change of bias makes no difference to element contents of films. The effect of bombardment by energetic particle is enhanced, and the formation of B-N bonding is preferential with the increasing of the bias. The increasing of bombardment energy favor the formation of sp3 B-N bonding.

关 键 词：BCN薄膜 靶功率 基体偏压 组织结构 

分 类 号：O484.1[理学—固体物理]