光电耦合器总剂量辐照的噪声表征  

1/f Noise Denoting for Radiation Tatal Dose of Optocoupler

作　　者：李应辉[1,2] 陈春霞[2] 蒋城[2] 刘永智[1] 

机构地区：[1]电子科技大学光电信息学院,四川成都610054 [2]重庆光电技术研究所,重庆400060

出　　处：《电子学报》2009年第8期1707-1711,共5页Acta Electronica Sinica

摘　　要：本文在研究光电耦合器工作原理、辐照理论及1/f噪声理论的基础上,分析了光电耦合器辐照噪声产生机理及特性,建立了光电耦合器总剂量辐照损伤噪声模型.研究结果表明,随着辐照总剂量增强,LED及光敏管氧化层中引入的氧化层陷阱密度增多,载流子数涨落增强,从而使电压噪声功率谱密度增加.实验结果验证理论分析的正确性,电压噪声功率谱密度可作为光电耦合器辐照损伤表征参量.Base on working principium of optocoupler, and the theory of radiation and 1/f noise, The mechanism and the charactory of radiation optocoupler are analysed, 1/f noise radiation model are established, flowing tatal dose ,Flowing the radiation dose increasing, traps of LED and phototransistor increasing, fluctuate of carries growing, the power spectrum of voltage noise largening, the power spectrum of voltage noise may be a new denotable parameter for optocoupler reliability.

关 键 词：光电耦合器 辐照 噪声 

分 类 号：O47[理学—半导体物理] TN2[理学—物理]