DC～30GHz并联接触式RF MEMS开关的设计与制造  

Design and fabrication of DC to 30 GHz DC-contact shunt RF MEMS switch

作　　者：侯智昊[1] 刘泽文[1] 李志坚[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《光学精密工程》2009年第8期1922-1927,共6页Optics and Precision Engineering

基　　金：国家自然科学基金资助项目(No.60576048);国家973重点基础研究发展规划资助项目(No.2007CB310500)

摘　　要：对适用于DC～30GHz频率的并联接触式RF MEMS开关的设计与制造进行了研究。利用低应力电镀Au桥膜作为上电极,实现了接触电极之间的Au-Au接触。使用BorofloatTM玻璃作为衬底,并用隔离电阻对内置射频信号与驱动电极旁路进行隔离;通过对上电极桥膜与CPW间距的优化设计,使开关具有较低的插入损耗。所设计制造的并联接触式RF MEMS开关的下拉电压为60V,上下电极的接触电阻为0.1Ω。插入损耗为-0.03dB@1GH,-0.13dB@10GHz和-0.19dB@20GHz,在DC～30GHz的插入损耗都<-0.5dB;隔离度为-47dB@1GHz,-30dB@10GHz和-25dB@20GHz,在DC～30GHz的隔高度都>-23dB。测试结果表明,所设计的并联接触式RF MEMS开关适用频率为DC～30GHz,是一种应用频率范围较宽的RF MEMS开关。The design and fabrication processes of a DC-contact shunt RF MEMS switch were studied to improve its performance. A low stress electroplated Au membrane was taken as an upper electrode to implement the Au Au direct contact. BorofloatTM glass was used as a substrate and a inside resistance was used to isolate the crosstalk between radio-frequency signal and bias voltage. Then,the distance between Au membrane and Coplanar Waveguide（CPW） was optimized to lower the insertion losses of the switch. Experimental results show that the contact resistance is 0.1 fl under the pull-down voltage of 60 V. The insertion losses are --0.03 dB@IGH, --0. 13 dB@10 GHz, --0. 19 dB@20 GHz in the frequency ranges from DC to 30 GHz, which is less than -- 0. 5 dB; the isolations are --47dB@l GHz, --30 dB@10 GHz and --25 dB@20 GHz in the same frequency ranges, which is all better than --23 dB. The measurement results show that the fabricated RF MEMS switch is suitable for the applications of frequency ranges from DC to 30 GHz.

关 键 词：微机电系统 RF MEMS开关 并联接触 

分 类 号：TM564[电气工程—电器] TN405[电子电信—微电子学与固体电子学]