1V高线性度2.4GHz CMOS低噪声放大器  

A 1-V highly linear 2.4GHz CMOS low-noise amplifier

作　　者：徐跃[1] 杨英强[1] 

机构地区：[1]南京邮电大学光电工程学院,江苏南京210003

出　　处：《电路与系统学报》2009年第4期97-100,共4页Journal of Circuits and Systems

基　　金：江苏省教育厅自然科学基金资助项目(TJ206012);南京邮电大学科学基金资助项目(NY207087)

摘　　要：讨论了低噪声放大器(LNA)在低电压、低功耗条件下的噪声优化及线性度提高技术。使用Chartered 0.25μmRF CMOS工艺设计一个低电压折叠式共源共栅LNA。后仿真结果表明在1V电源下,2.36GHz处的噪声系数NF仅有1.32dB,正向增益S21为14.27dB,反射参数S11、S12、S22分别为-20.65dB、-30.27dB、-24dB,1dB压缩点为-13.0dBm,三阶交调点IIP3为-0.06dBm,消耗的电流为8.19mA。The noise figure optimization and linearity improvement techniques of a low-noise amplifier(LNA) under low voltage low power condition are discussed.Implemented in chartered 0.25μm RF CMOS technology,a folded-cascode-type LNA adapted to low voltage is designed.The post-layout simulation results show that the LNA respectively attains a 1.32dB noise figure from 2.36GHz,14.27 dB S21,-20.65dB S11,-24dB S22,-30.27dB S12,-13.0dBm 1-dB compression point and-0.06dBm IIP3,with the core circuit consuming 8.19mA from a 1V power supply.

关 键 词：低噪声放大器 噪声系数 低电压 折叠式共源共栅 线性度提高 

分 类 号：TN43[电子电信—微电子学与固体电子学]