叠加能量Si^+、N^+共注入SiO_2薄膜的光致发光  

PHOTOLUMINESCENCE FROM Si +, N + COIMPLANTED SiO 2 FILMS

作　　者：赵俊[1,2] 杨根庆[1,2] 丁星肇 林梓鑫[1,2] 江炳尧 周祖尧[1,2] 柳襄怀 

机构地区：[1]中国科学院上海冶金研究所离子束开放研究实验室 [2]中国科学院上海冶金研究所传感技术国家重点实验室

出　　处：《功能材料与器件学报》1998年第3期198-202,共5页Journal of Functional Materials and Devices

摘　　要：报道了用叠加能量Ｓｉ＋、Ｎ＋共注入ＳｉＯ２薄膜研究硅基发光材料。Ｓｉ＋、Ｎ＋先后注入ＳｉＯ２薄膜，并在衬底中重叠。样品退火后在紫外光激发下，可以观察到很强的紫外（～３４０ｎｍ）和紫色（～４２７ｎｍ）光致发光（ＰＬ）。还研究了光致发光激发（ＰＬＥ）谱并对发光机制进行了探讨。Si based light emission materials were fabricated by Si +, N + coimplanting into SiO 2 films, Si + and N + ions were sequentially implanted with three energies and the distribution of both ions were overlapped in the implanted region. Short wavelength peaks at～340nm and ～ 427nm were measured in room temperature PL spectra of the annealed samples. Photoluminescence excitation (PLE) spectra were also studied and the light emission mechanisms are briefly discussed.

关 键 词：光致发光 叠加能量 离子注入 硅基发光材料 

分 类 号：TN204[电子电信—物理电子学]