p-Si上激光诱导局部沉积铂  

Laser-Induced Partial Deposition of Pt on p-Silicon Wafers

作　　者：崔启明[1] 江志裕[1] 郁祖湛[1] 应质峰[2] 

机构地区：[1]复旦大学化学系,上海200433 [2]复旦大学物理系

出　　处：《应用化学》1998年第4期104-106,共3页Chinese Journal of Applied Chemistry

摘　　要：The partial deposit films on p-silicon wafers were formed from three kinds of plating solution: chloro-platinic acid, potassium tetranitroplatinate and diammine platinium dinitrate under Nd: YAG laser irradiation. The compositions and properties of the depositswere investigated by AES, SEM and XPS techniques. The Pt deposits have ohmic contactwith p-type silicon.The partial deposit films on p-silicon wafers were formed from three kinds of plating solution: chloro-platinic acid, potassium tetranitroplatinate and diammine platinium dinitrate under Nd: YAG laser irradiation. The compositions and properties of the depositswere investigated by AES, SEM and XPS techniques. The Pt deposits have ohmic contactwith p-type silicon.

关 键 词：电镀铂 激光诱导 沉积 P-SI 硅基体 铂 

分 类 号：TN305.99[电子电信—物理电子学]