Ag掺杂ZnO薄膜结构和光学特性研究  

Structure and Optical Properties of Ag Doped ZnO Thin Films

作　　者：鲁萌萌[1] 马学鸣[1] 程文娟[1] 

机构地区：[1]华东师范大学物理系,光谱学与波谱学教育部重点实验室,上海200062

出　　处：《人工晶体学报》2009年第4期870-875,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金资助项目(No.60606004)

摘　　要：采用脉冲激光沉积技术制备出了Ag掺杂的ZnO薄膜。研究了Ag含量、衬底温度及氧压对ZnO结构和光学性能的影响。结果表明:Ag以替位形式存在于ZnO晶格中,Ag掺杂浓度较低时,样品具有高度c轴择优取向。衬底温度越高,薄膜的结晶质量越好,光学带隙越接近纯ZnO的带隙,而其紫外荧光峰在衬底温度为300℃时最强。氧压为10 Pa时,薄膜的结晶质量最好,紫外峰最强,其带隙则随氧压的增大呈先变窄后加宽的趋势。Ag-doped ZnO thin films were fabricated by pulsed laser desposition technique. The effects of Ag contents, substrate temperature and oxygen pressure on the structure and optical properties of ZnO thin films were studied. The results show that Ag ion substitutes for Zn2＋ of ZnO host and highly preferred c-axis oriented ZnO films were obtained at low Ag contents. With increasing of substrate temperature, the qualities of the films were enhanced, the optical band gap is found to become larger and shift closely to that of pure ZnO, and strong violet luminescence is observed for the film prepared at temperature of 300 ~C. Among the films obtained at different oxygen pressure, the crystal quality of the film deposited at 10 Pa is the best, and its violet luminescence is the strongest. With increasing of pressure, the optical band gap of the films become narrow first and then widen.

关 键 词：AG掺杂 ZNO薄膜 脉冲激光沉积 荧光特性 

分 类 号：O484[理学—固体物理]