ZnO压电薄膜的制备与性能表征  

Preparation and Charaterization of ZnO Piezoeletric Film

作　　者：许恒星[1] 王金良[1] 唐宁[1] 彭洪勇[1] 范超[1] 

机构地区：[1]北京航空航天大学物理科学与核能工程学院,北京100191

出　　处：《人工晶体学报》2009年第4期880-883,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金(No.10432050No.50772006)

摘　　要：采用射频磁控溅射法在硅(100)衬底上制备高质量的ZnO压电薄膜。利用X射线衍射仪(XRD)、原子力显微镜(AFM)、压电响应力显微镜(PFM)等仪器研究了薄膜成分,表面形貌和压电性质。结果表明:实验制备的ZnO薄膜具有很好的压电性质,c轴取向和表面粗糙度对薄膜压电特性有很大影响,高度c轴取向生长和表面粗糙度较小的ZnO薄膜表现出更好的压电性质。ZnO films were prepared on Si （100） substrates by RF magnetron sputtering process. Compositions, surface appearance, and piezoelectricity were studied by XRD, AFM and PFM. The results indicate that the prepared ZnO film has excellent piezoelectricity. The piezoelectricity of the film is dependent on the c axis orientation and surface roughness. The sample with smoother surface and a preferred orientation of c axis shows a better piezoelectricity. strongly strongly

关 键 词：ZNO薄膜 射频磁控溅射 压电性质 表面粗糙度 

分 类 号：O484[理学—固体物理]