浸没式光刻向22nm挺进  

193-nm Immersion Lithography with Double-Patterning-Advance to the 22nm

作　　者：马建军 张崇巍 

机构地区：[1]长庆实业集团有限公司,陕西西安710021 [2]甘肃林业技术学院,甘肃天水741020

出　　处：《电子工业专用设备》2009年第8期1-8,50,共9页Equipment for Electronic Products Manufacturing

摘　　要：简述了光学光刻技术在双重图形曝光、高折射率透镜材料及浸没介质、32nm光刻现状及22nm浸没式光刻技术的进展,指出了光学光刻技术的发展趋势及进入22nm技术节点的前景。The optical lithography technology with double patterning, high refractive index lens materials and immersion media, 32 nm and 22 nm immersion lithography status of progress in lithography is outlined in this paper, and pointing out that the optical lithography technology trends and access to 22 nm technology nodes outlook.

关 键 词：光学光刻 32 nm光刻 22 nm光刻进展 193 nm浸没式光刻 双重图形光刻 

分 类 号：TN305.7[电子电信—物理电子学]