感应耦合辅助磁控溅射氧化锌薄膜在铜铟硒薄膜太阳能电池中的界面(英文)  

Interface study of CuInSe_2/ZnO and CuInSe_2/ZnO devices using ICP-assisted magnetron sputtering ZnO buffer layer

作　　者：江贵生[1] 张杰[1] 

机构地区：[1]安庆师范学院物理学院,安庆246011

出　　处：《功能材料与器件学报》2009年第4期409-413,共5页Journal of Functional Materials and Devices

基　　金：Natural Science Foundation of Anhui province(No.2005kj232)

摘　　要：薄膜铜铟硒太阳能电池由于前后电极间欧姆接触导致电流损耗,高阻氧化锌层可以消除因表面空洞或表面损坏造成的前后电极短路,这种作用大小取决于氧化锌薄膜表面形貌和电阻率。本论文研究了用感应耦合等离子辅助磁控溅射氧化锌薄膜在铜铟硒薄膜太阳能电池中的应用,并分析氧化锌薄膜层和铜铟硒层的界面结构特点。实验用氧化锌陶瓷靶在氧气和氩气环境下进行溅射,当溅射气压为4 mTorr,射频功率300W,直流偏压30V时,制备的氧化锌具有表面形貌均匀致密,电阻率为7×108Ω.cm、透光率80%以上等特性,与吸收层铜铟硒构成良好的异质结界面。A connection between the back contact and the front contact in a solar cell will short -circuit the cell by forming a highly conductive ohmic shunt path. Without the intrinsic zinc oxide （ i - ZnO） layer, a scratch or a hole would form a shunt path between the molybdenum back contact and the aluminum doped zinc oxide front contact. Intrinsic ZnO layer can reduce the effect of this kind of shunts and the amount of protection depends on the resistivity and the morphology of the ZnO film. In our work, ZnO film was prepared for CIS solar cell application[ 5 -6 ] on CIS layer by inductively coupled plasma （ICP） assisted DC magnetr on sputtering at room temperature. The sputtering was done in an Ar and O2 gas mixture and a ceramic ZnO target was used. The microstructures of the film were investigated by X - ray diffractometer （XRD） and scanning electron microscope （SEM）. Film with resistivity of 7 × 10^8Ω cm and transmittance of about 80% in the visible range was prepared under the conditions of 4 mTorr working pressure, 300W RF power, 30W DC power.

关 键 词：氧化锌薄膜 感应耦合等离子磁控溅射 界面研究 

分 类 号：TB383[一般工业技术—材料科学与工程]