（Ba0.6Sr0．4）Ti1-xZnxO3薄膜的介电调谐性能  

Dielectric and Tunable Properties of （Ba0.6Sr0.4）Ti1-xZnxO3 Thin Films

作　　者：孙小华[1,2] 邹隽[1] 胡宗智[1] 吴敏[1] 赵兴中[2] 

机构地区：[1]三峡大学机械与材料工程学院,湖北宜昌443002 [2]武汉大学物理科学与技术学院,湖北武汉430072

出　　处：《纳米科技》2009年第4期46-50,共5页

摘　　要：利用溶胶-凝胶法在Pt／TiO2/SiO2/Si衬底上制备了（Ba0．6Sr0．4）Ti1-xZnxO3（BSTZ）薄膜，用X射线衍射和扫描电镜分析测定了BSTZ的微结构和薄膜的表面形貌，研究Zn掺杂量对其介电调谐性能的影响，结果表明，随Zn含量的增加BSTZ物相无明显变化，其介电常数、调谐量先增加后降低，但介电损耗却先降低后增加。在室温1MHz下，1．5m01％Zn掺杂BSTZ薄膜有最大的调谐量54．26％；2．5mol％Zn掺杂BSTZ薄膜有最低的介电损耗0．0148和最大的优值因子30．3。（Ba0.6Sr0.4）Ti1-xZnxO3 thin films were fabricated by sol-gel method on Pt/TiO2/SiO2/Si substrate. X-ray diffraction and scanning electron microscopy were used to determine the microstructure and the morphology of the thin films. The dielectric and tunable properties of BSTZ thin films were investigated as a function of Zn doped concentration. It was found that the effect of Zn doping on BST microstructnre was not obvious. The dielectric constant and tunability of BSTZ thin films all increase and then decrease with the increasing Zn content. However, the dielectric losses of BSTZ thin films decrease and then increase with the increasing of Zn content. At room temperature and 1 MHz, the 1.5mol%Zn doped BST thin film has the maximal tunability of 54.26% and 2.5mol%Zn doped BST thin film has the minimal dielectric loss of 0.0148 and the maximal FOM of 30.3.

关 键 词：BST薄膜 掺杂 溶胶-凝胶 介电调谐性能 

分 类 号：TB34[一般工业技术—材料科学与工程] TB43