利用Langmuir技术构筑的光抗蚀剂聚合物纳米薄膜的表面微观结构及在光刻蚀方面的应用(Ⅱ):用深紫外诱导的含缩酮共聚物的光刻和光化学反应  

Molecular Arrangements and Photopatterning of Polymer Photoresists in Ultrathin Nanosheets by Langmuir Technique(Ⅱ): Photolithography and Photoreaction of Copolymer Containing Ketal-protected Group Induced by Deep UV Irradiation

作　　者：许文俭[1] 宁建中[2] 付鸿[2] 李铁生[1] 吴养洁[1] 

机构地区：[1]郑州大学化学系,郑州450052 [2]中州大学化工食品学院,郑州450075

出　　处：《中州大学学报》2009年第4期108-112,共5页Journal of Zhongzhou University

基　　金：河南省自然科学基金(0611020100);河南省杰出人才创新基金(074100510015)资助项目

摘　　要：用AFM、UVvis、FTIR、GPC和石英晶体微天平(QCM)对以十二烷基甲基丙烯酰胺(DDMA)为成膜物质,以1,4-二噁螺环[4,4]壬烷-2-亚甲基甲基丙烯酸酯(DNMMA)为光敏感物质的共聚物(pDDMA-DNMMA)LB膜的光刻过程及光分解机理进行了初步探讨。实验结果表明,在深紫外光源照射下,聚合物分子的主链和侧链发生分解反应,生成能挥发、易溶解的链碎片,用碱溶液显影后,可得到分辨率为0.75μm(所用掩膜所能达到的最大分辨率)的抗蚀剂LB膜正型图形。以这种共聚物LB膜图形为抗蚀层,经湿法腐蚀、除去抗蚀层等工序,可将抗蚀剂图形较好地转移到金薄膜上,得到具有相同分辨率的金属金的转移图形。A novel polymer containing ketal - protected group, poly （ N - dodecylmethacrylamide - co - 1, 4 - dioxaspiro [ 4. 4 ] nonane - 2 - methyl methacrylate） p （ DDMA - DNMMA）, was synthesized and prepared in LB film. The photolithography and photoreaction of the polymer were investigated by atomic force microscopy （AFM）, UV- vis, FTIR, GPC and quartz crystal microbalance （QCM）. Upon deep UV irradiation, photochemical reaction and photo - decomposition of not only ketal group but main chains of polymer, occurred in ultrathin films. The exposed parts in LB films could be eliminated after development in alkaline aqueous solution, as a result, a fine positive - tone pattern with a resolution of 0.75 μm was figured. Studies showed that p （ DDMA - DNMMA50） LB films had high resistance ability and gave a fine transferred pattern of gold.

关 键 词：光化学 Langmuir—Blodgett(LB)膜 光分解 光刻 

分 类 号：O647.2[理学—物理化学] TB43[理学—化学]