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作 者:贾启辉[1] 吴蔚[1] 汪彩芬[1] 翟宇佳[1] 韩超[1] 刘家臣[1]
机构地区:[1]天津大学材料学院,天津300072
出 处:《真空电子技术》2009年第4期72-74,共3页Vacuum Electronics
基 金:天津市应用基础及前沿技术研究计划(08JCYBJC08800)
摘 要:选取95Al2O3陶瓷体作为金属化基体,采用Cu粉在微波作用下进行金属化实验,研究了微波功率、处理时间、保护措施和金属化配方对微波金属化质量的影响。对金属化成分和表面结构进行了分析。结果表明,在氧化气氛中,微波3 kW/10 min处理,炭粉埋烧保护和金属化配方添加5%SiC和5%(质量比)C粉的条件下,在95Al2O3陶瓷表面可获得较好的Cu金属化效果。Based on 95Al2O3 ceramics as a matrix and Cu powder as metal compositions, metallization was carried out on ceramic surface by microwave technique. Effects of microwave power, holding time, protection measures and design of metalizing prescription on qualities of metallization were investigated. Composition and microstructure of the metalized interface were analyzed. It was showed that ideal metalized quality could be achieved by 3 kW/10min microwave treating with addition of 5% (wt) SiC and 5% C with protecting measure of buried C powder.
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