化学气相沉积制备SiC涂层——I.热力学研究  

CHEMICAL VAPOR DEPOSITION OF SILICON CARBIDE-----I Thermodynamic Study

作　　者：朱庆山[1] 邱学良[1] 马昌文[1] 

机构地区：[1]清华大学核能技术设计研究院新材料室

出　　处：《化工冶金》1998年第3期193-198,共6页

摘　　要：对化学气相沉积（ＣＶＤ）法制备ＳｉＣ的热力学进行了系统研究，考察了Ｈ２－ＭＴＳ，Ａｒ－ＳｉＯ－Ｃ，Ｈ２－ＳｉＯ－ＣｘＨｙ，Ｈ２－ＳｉＨ４－ＣｘＨｙ等体系，着重研究了温度、压力、载气量和初始反应气体浓度对沉积单相ＳｉＣ的影响，以ＣＶＤ相图的形式给出了计算结果，这些相图对ＣＶＤ法制备ＳｉＣ的实验具有指导作用．Thermodynamics of CVD of silicon carbide was studied and theH 2 MTS, Ar SiO C, H 2 SiO C xH y,H 2 SiH 4 C xH y systems were calculated The influence of temperature, pressure, carrier gas ratio and gas concentration of reactant on the deposition of single-phase silicon carbide was evaluated and the calculated results were presented as CVDphase diagrams

关 键 词：化学气相沉积 碳化硅 热力学 涂层 相图 

分 类 号：TG174.453[金属学及工艺—金属表面处理]