基于ECR-PEMOCVD生长的稀磁半导体(Ga,Mn)N的特性  

Characteristics of dilute magnetic semiconductor(Ga,Mn)N grown by ECR-PEMOCVD

作　　者：宋世巍[1] 秦福文[1] 吴爱民[1] 何欢[1] 王叶安[1] 姜辛[1] 徐茵[1] 顾彪[1] 

机构地区：[1]大连理工大学三束材料改性重点实验室,辽宁大连116024

出　　处：《功能材料》2009年第9期1473-1476,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(60476008)

摘　　要：利用电子回旋共振-等离子体增强金属有机物化学气相沉积(ECR-PEMOCVD)技术,在蓝宝石(α-Al2O3)衬底上生长出Mn含量约为3%的(Ga,Mn)稀磁半导体薄膜。利用反射高能衍射(RHEED)、原子力显微镜(AFM)和X射线衍射(XRD)表征(Ga,Mn)N薄膜的表面形貌和结构特征。(Ga,Mn)N薄膜具有良好的(0002)择优取向和纤锌矿结构,表面形貌是由许多亚微米量级的晶粒按一致的取向规则堆砌而成。光致发光(PL)测量发现3.27eV附近出现施主-受主对(DAP)发光峰。超导量子干涉仪(SQUID)测量表明薄膜在室温下具有铁磁性,没有发现超顺磁性和自旋玻璃态,居里温度可达400K。Diluted magnetic semiconductor film （Ga,Mn）N with Mn concentration up to 3 M was grown on sapphire （α-Al2 O3） substrate by electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition （ECR-PEMOCVD）. The crystal structure and surface topography of the （Ga, Mn）N films were characterized by reflection high-energy electron diffraction （RHEED）,X-ray diffraction （XRD） and atomic force microscope （AFM）. （Ga,Mn）N films exhibit good （0002） preferred orientation and retain good wurtzite structure,no second phase was detected. The surface topography of （Ga,Mn） N film is composed of many submicron grains piled in the consistent orientation. A peak about donor-acceptor pair is found at 3.27eV by photoluminescence （PL）. SQUID test result shows that the films exhibit ferromagnetic at room temperature,no superparamagnetic or spin glass is detected,the Curie temperature of the film is about 400K.

关 键 词：(Ga Mn)N ECR—PEMOCVD 室温铁磁 性 居里温度 

分 类 号：TN304.2[电子电信—物理电子学] TN304.7