CdS多晶薄膜的制备及性质研究  

Preparation and properties of polycrystalline CdS thin films for solar cells

作　　者：杨定宇[1,2] 郑家贵[2] 朱兴华[1] 魏昭荣[1] 夏庚培[2] 冯良桓[2] 

机构地区：[1]成都信息工程学院光电技术系,四川成都610225 [2]四川大学材料科学与工程学院,四川成都610064

出　　处：《功能材料》2009年第9期1499-1501,1505,共4页Journal of Functional Materials

基　　金：国家高技术研究发展计划(863计划)重点资助项目(2001AA513010);四川省应用基金资助项目(2006J13-083);中国高校博士点基金资助项目(20050610024)

摘　　要：分别采用近空间升华法和电子束蒸发法在透明导电玻璃和普通载玻片上制备了硫化镉(CdS)多晶薄膜。对制备样品的表征结果表明:(1)两种方法制备样品都沿(002)晶向择优生长,属于六方相多晶结构,但择优取向度不同;(2)CdS薄膜表面连续而致密,粒径均匀,但两种工艺制备样品的S:Cd原子比有较大差异;(3)CdS薄膜的光能隙在2.39～2.44eV之间,电子束蒸发制备样品光能隙稍小。分析认为,两种方法制备样品的上述差异可能与衬底温度、沉积时间及成膜机制的不同相关。Polycrystalline thin CdS films were grown respectively on transparent conductive glass and ordinary glass substrate by close-spaced sublimation（CSS） and electron beam evaporation（EBE） method. The characterization revealed that CdS films prepared by the two method were polycrystalline and present preferential （002） orientation of hexagonal phase. The morphology of CdS films is found to be continuous and compactness, and with uniform grain size. The optical energy gap of CdS films were between 2.39 and 2.44eV, and the EBE sampies possess smaller optical gap. In conclusion, as a result of differences in substrate temperature, deposition time and growth mechanism, the degree of preferential growth, the Cd ＂ S atom ratio and optical gap of CdS films prepared by two method were different.

关 键 词：CdS多晶薄膜 太阳电池 近空间升华法 电子束蒸发法 

分 类 号：TK514[动力工程及工程热物理—热能工程]