Nb_5N_6 thin film on silicon and silicon oxide: A good material for terahertz detection  

作　　者：LU XueHui HE Ning KANG Lin CHEN Jian JIN BiaoBing WU PeiHeng 

机构地区：[1]Department of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

出　　处：《Chinese Science Bulletin》2009年第18期3344-3346,共3页

基　　金：Supported by the National Basic Research Programme of China (Grant Nos. 2006CB601006 and 2007CB310404);National High-Tech R&D Programme of China (Grant No. 2006AA12Z120);National Natural Science Foundation of China (NSFC) (Grant Nos. 10778602 and 60721063)

摘　　要：Voltage responsivity of bolometer will benefit from high temperature coefficient of resistance (TCR) of the material. The Nb5N6 thin solid films we proposed in this paper have high TCR, compared with the commonly-used materials such as Nb and Bi. The films were sputtered on Si(100), SiO2/Si(100), SiO2 substrates by using radio frequency (rf) magnetron sputtering. The deposition conditions have been optimized to get high TCR. The highest TCR is over 0.91% K-1 at 300 K and up to 4.5% K -1―7% K-1 at 78 K, which is good enough to be used in terahertz detection and thermometer fabrication in the range from 78 K to 300 K.Voltage responsivity of bolometer will benefit from high temperature coefficient of resistance （TCR） of the material. The Nb5N6 thin solid films we proposed in this paper have high TCR, compared with the commonly-used materials such as Nb and Bi. The films were sputtered on Si（100）, SiO2/Si（100）, SiO2 substrates by using radio frequency （rt） magnetron sputtering. The deposition conditions have been optimized to get high TCR. The highest TCR is over 0.91% K^-1 at 300 K and up to 4.5% K^-1 -7% K^-1 at 78 K, which is good enough to be used in terahertz detection and thermometer fabrication in the range from 78 K to 300 K.

关 键 词：常用材料 二氧化硅 太赫兹 检测 薄膜 SI(100) 电阻温度系数 磁控溅射 

分 类 号：TQ127.2[化学工程—无机化工] U260.4[机械工程—车辆工程]