supported by the National Natural Science Foundation of China(62293521,62174167,12205119);Shanghai Rising-Star Program(22QA1410700);China Postdoctoral Science Foundation(2022M723282);Zhejiang Provincial Natural Science Foundation of China(LQ23F040002);Jiaxing Municipal Public Welfare Research Project(2022AY10027).
A reliable,efficient and electrically-pumped Si-based laser is considered as the main challenge to achieve the integration of all key building blocks with silicon photonics.Despite the impressive advances that have be...
Project supported by the Shandong Provincial Natural Science Foundation,China(Grant Nos.ZR2022MA025 and ZR2020MA077).
The possible configurations of pyrrole absorbed on a Si(100)surface have been investigated by x-ray photoelectron spectroscopy(XPS)and near-edge x-ray absorption fine structure(NEXAFS)spectra.The C-1s XPS and NEXAFS s...
supported by National Key Research and Development Program of China(Grant No.2021YFB3601900);National Natural Science Foundation of China(Grant Nos.62174167,62293520,62293521);Shanghai Rising-Star Program(Grant No.22QA1410700);Shanghai Basic Research Project(Grant No.22JC1403300);K.C.Wong Education Foundation(Grant No.GJTD-2019-11)。
Ion-cutting technology is an ingenious solution to the highquality heterogeneous integration of Ga N thin films with CMOS-compatible Si(100)substrate,which provides a platform to combine Ga N-based optoelectronics,hig...
Project supported by the Science Challenge Project(Grant No.TZ2016003-1-105);Tianjin Natural Science Fundation(Grant No.20JCZDJC00750);the Fundamental Research Funds for the Central Universities,Nankai University(Grant Nos.63211107 and 63201182).
Defects have a significant impact on the performance of semiconductor devices.Using the first-principles combined with one-dimensional static coupling theory approach,we have calculated the variation of carrier captur...
Within the framework of the density functional theory and the pseudopotential method,the electronic structure calculations of the“metal-Si(100)”systems with Li,Be and Al as metal coverings of one to four monolayers(...
supported in part by the National Key R&D Program(Grant No.2018YFB2003305);the National Natural Science Foundation of China(Grant Nos.61774165,61704186,and 61827823);the program from SINANO(Y8AAQ11003 and Y4JAQ21005)。
The atomic structure and surface chemistry of GaP/Si(100)heterostructure with different pre-layers grown by molecu-lar beam epitaxy are studied.It is found that GaP epilayer with Ga-riched pre-layers on Si(100)substra...
Atmospheric-pressure(AP)plasma etching provides an alternative method for mechanical grinding to realize wafer thinning of Si wafer.It can avoid the damages and micro-cracks that would be introduced by mechanical stre...
the National Natural Science Foundation of China(No.11874242,No.11804196,No.11804197);support provided by China Scholarship Council(CSC)for Yong Ma to Royal Institute of Technology(KTH)is acknowledged;support of the Taishan Scholar Project of Shandong Province。
The geometric and electronic structures of several possible adsorption configurations of the pyrazine(C4H4N2)molecule covalently attached to Si(100)surface,which is of vital importance in fabricating functional nano-d...
the National Natural Science Foundation of China(Nos.51425401,51690162);Liaoning Innovative Research Team in University(No.LT2017011);the Fundamental Research Funds for the Central Universities(Nos.N160907001,N180915002 and N180912004)。
The morphology evolution and magnetic properties of Co films–native oxide Si(100)were investigated at 873,973,and 1073 K in a high magnetic field of 11.5 T.Formation of Kirkendall voids in the Co films was found to c...