中子辐照GaAs的沟道卢瑟福背散射研究  

Channeling RBS Study of Neutron Irradiated GaAs

作　　者：刘键[1,2,3] 王佩璇[1,2,3] 柯俊[1,2,3] 朱沛然[1,2,3] 扬峰[1,2,3] 殷士端[1,2,3] 

机构地区：[1]北京科技大学材料物理系 [2]中国科学院物理研究所 [3]中国科学院半导体研究所

出　　处：《Journal of Semiconductors》1998年第9期672-677,共6页半导体学报（英文版）

摘　　要：用沟道ＲＢＳ方法研究了中子辐照ＧａＡｓ的缺陷在快速退火过程中的恢复行为．结果表明，在１０１４～１０１７／ｃｍ２范围内离位原子浓度近似按辐照剂量量级的平方关系增长．中子辐照效应对ψ１／２没有影响．经一定剂量辐照后，退火温度越高，退火时间越长，离位原子的恢复效果越明显．１０１５／ｃｍ２剂量辐照损伤的恢复激活能Ｅ１０．３５ｅＶ，可能对应空位与迁移而来的填隙原子的复合；而１０１７／ｃｍ２剂量辐照损伤的恢复激活能Ｅ２０．１３ｅＶ，对应空位与其附近的填隙原子的复合．Abstract The rapid annealing behaviour of GaAs crystals irradiated with various neutron fluences has been investigated by using channeling RBS. The results show that the concentration of diplaced atoms increases with the square of log φ (φ the neutron fluence). During annealing the concentration of displaced atoms decreases with the temperature and annealing time increasing. The neutron irradiation has little effect on φ 1/2 . For the neutron fluence of 10 15 /cm 2,the activation energy of defect annihilation E 10 35eV,which may be attributed to the recombination of vacancies with migrating interstitials. The activation energy : E 2=0 13eV for the neutron fluence of 10 17 /cm 2 may, probably, correspond to the recombination of vacancies with nearby interstitials.

关 键 词：砷化镓 中子辐照 沟道RBS法 

分 类 号：TN304.23[电子电信—物理电子学]