K·P方法计算InGaAs/InP应变量子阱的增益矩阵元  

The calculation of gain matrix element of InGaAs/InP strain quantum well by using K·P method

作　　者：黄钟英[1] 刘宝林[1] 

机构地区：[1]厦门大学

出　　处：《半导体光电》1998年第4期235-238,共4页Semiconductor Optoelectronics

摘　　要：应用Ｋ·Ｐ微扰法计算能带的基本方法，在考虑偏振随波矢变化的情况下，分别计算了无应变、１％压缩应变和１％伸张应变下４．０ｎｍ阱宽ＩｎＧａＡｓ／ＩｎＰ量子阱的增益矩阵元。计算表明，增益矩阵元的偏振因子随波失的变化而发生很大的变化。Taking TM and TE polarization into account,calculations of gain matrix elements are respectively made for unstrain,1% tensile strain and 1% compressive strain InGaAs/InP quantum well with the well width of 4.0 nm by means of K·P method for calculating energy band.The result shows that the gain matrix elements change dramatically with the variation of wave vector.

关 键 词：K·P方法 应变量子阱 增益矩阵元 半导体激光器 

分 类 号：TN302[电子电信—物理电子学] TN248.402