Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures  

作　　者：赵建芝 林兆军 Timothy D Corrigan 张宇 吕元杰 鲁武 王占国 陈弘 

机构地区：[1]School of Physics,Shandong University [2]Department of Physics,University of Maryland,College Park [3]Department of Electrical Engineering,The Ohio State University [4]Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences [5]Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2009年第9期3980-3984,共5页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant No 10774090);the National Basic Research Program of China (Grant No 2007CB936602)

摘　　要：Using the measured capacitance voltage curves and the photocurrent spectrum obtained from the Ni Schottky contact on a strained Al0.3Ga0.7N/GaN heterostructure, the value of the relative permittivity of the AlGaN barrier layer was analysed and calculated by self-consistently solving SchrSdinger＇s and Poisson＇s equations. It is shown that the calculated values of the relative permittivity are different from those formerly reported, and reverse biasing the Ni Schottky contact has an influence on the value of the relative permittivity. As the reverse bias increases from 0 V to -3 V, the value of the relative permittivity decreases from 7.184 to 7.093.Using the measured capacitance voltage curves and the photocurrent spectrum obtained from the Ni Schottky contact on a strained Al0.3Ga0.7N/GaN heterostructure, the value of the relative permittivity of the AlGaN barrier layer was analysed and calculated by self-consistently solving SchrSdinger＇s and Poisson＇s equations. It is shown that the calculated values of the relative permittivity are different from those formerly reported, and reverse biasing the Ni Schottky contact has an influence on the value of the relative permittivity. As the reverse bias increases from 0 V to -3 V, the value of the relative permittivity decreases from 7.184 to 7.093.

关 键 词：relative permittivity AlGaN barrier layer AlGaN/GaN heterostructures 

分 类 号：O472.4[理学—半导体物理]