A novel structure of a high current gain 4H-SiC BJT with a buried layer in the base  

作　　者：张有润 张波 李肇基 邓小川 刘曦麟 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China

出　　处：《Chinese Physics B》2009年第9期3995-3999,共5页中国物理B（英文版）

摘　　要：In this paper, a new structure of a 4H-SiC bipolar junction transistor （BJT） with a buried layer （BL） in the base is presented. The current gain shows an approximately 100% increase compared with that of the conventional structure. This is attributed to the creation of a built-in electric field for the minority carriers to transport in the base which is explained based on 2D device simulations. The optimized design of the buried layer region is also considered by numeric simulations.In this paper, a new structure of a 4H-SiC bipolar junction transistor （BJT） with a buried layer （BL） in the base is presented. The current gain shows an approximately 100% increase compared with that of the conventional structure. This is attributed to the creation of a built-in electric field for the minority carriers to transport in the base which is explained based on 2D device simulations. The optimized design of the buried layer region is also considered by numeric simulations.

关 键 词：4H-SIC bipolar junction transistor （BJT） buried layer current gain 

分 类 号：TN322.8[电子电信—物理电子学] TN325.2