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机构地区:[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054
出 处:《稀有金属材料与工程》2009年第9期1570-1574,共5页Rare Metal Materials and Engineering
基 金:国家自然科学基金(50601005)
摘 要:采用射频磁控溅射工艺,在镀有ITO薄膜的柔性PET衬底上低温制备WOx-Mo薄膜,利用电化学工作站测试薄膜的循环伏安曲线和计时电流曲线来分析薄膜的电致变色性能。结果表明:随Mo掺杂量的增加,薄膜的氧化峰峰位往电压正方向移动,并且氧化峰电流峰值增加,薄膜着色响应时间缩短,退色时间延长。当Mo掺杂量为15.4%时,着色时间最短达到4.53s,退色时间最长达到9.8s。薄膜的可逆性与电荷在薄膜中的滞留量有关,在Mo掺杂量为7.6%时,薄膜可逆性最好,达到51.2%左右,电荷滞留量为2.4E-3C。WOx-Mo thin films have been deposited on the ITO/PET substrates by RF magnetron sputtering. The electrochromic properties of films were investigated by cyclic voltammetry (C-V) and chronoamperometry (CA) methods. It is found that the maximum of oxidation current increases and the oxidation peaks move to plus potential with increasing Mo doping concentration. Furthermore, the coloring response time decreases and the bleaching response time increases with increasing Mo doping concentration in the experimental range. For the film doped 15.4% Mo, the oxidation current reaches the maximum and the coloring response time is 4.53 s, the bleaching response time is 9.8 s. Not all the samples exhibit good reversibility due to the charge left in the film. The best reversibility is 51.2 % in the WOx film doped 7.6% Mo.
分 类 号:TB383.2[一般工业技术—材料科学与工程]
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