The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates  

作　　者：吴玉新 朱建军 赵德刚 刘宗顺 江德生 张书明 王玉田 王辉 陈贵锋 杨辉 

机构地区：[1]State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences [2]Institute of Information Function Materials, Hebei University of Technology [3]Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences

出　　处：《Chinese Physics B》2009年第10期4413-4417,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant Nos 60506001, 60476021, 60576003, 60776047 and 60836003);the National Basic Research Program of China (Grant No 2007CB936700);Project of Technological Research and Development of Hebei Province (Grant No 07215134)

摘　　要：High-quality and nearly crack-free GaN epitaxial layer was obtained by inserting a single A1GaN interlayer between GaN epilayer and high-temperature AlN buffer layer on Si （111） substrate by metalorganic chemical vapor deposition. This paper investigates the effect of AlCaN interlayer on the structural properties of the resulting CaN epilayer. It confirms from the optical microscopy and Raman scattering spectroscopy that the AIGaN interlayer has a remarkable effect on introducing relative compressive strain to the top GaN layer and preventing the formation of cracks. X-ray diffraction and transmission electron microscopy analysis reveal that a significant reduction in both screw and edge threading dislocations is achieved in GaN epilayer by the insertion of AlGaN interlayer. The process of threading dislocation reduction in both AlGaN interlayer and GaN epilayer is demonstrated.High-quality and nearly crack-free GaN epitaxial layer was obtained by inserting a single A1GaN interlayer between GaN epilayer and high-temperature AlN buffer layer on Si （111） substrate by metalorganic chemical vapor deposition. This paper investigates the effect of AlCaN interlayer on the structural properties of the resulting CaN epilayer. It confirms from the optical microscopy and Raman scattering spectroscopy that the AIGaN interlayer has a remarkable effect on introducing relative compressive strain to the top GaN layer and preventing the formation of cracks. X-ray diffraction and transmission electron microscopy analysis reveal that a significant reduction in both screw and edge threading dislocations is achieved in GaN epilayer by the insertion of AlGaN interlayer. The process of threading dislocation reduction in both AlGaN interlayer and GaN epilayer is demonstrated.

关 键 词：GAN Si （111） substrate metalorganic chemical vapor deposition AlGaN interlayer 

分 类 号：TN304.055[电子电信—物理电子学]