Radiation response of pseudo-MOS transistors fabricated in hardened fully-depleted SIMOX SOI wafers  

作　　者：毕大炜 张正选 张帅 陈明 余文杰 王茹 田浩 刘张李 

机构地区：[1]The State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences

出　　处：《Chinese Physics C》2009年第10期866-869,共4页中国物理C（英文版）

基　　金：Supported by Major State Basic Research Development Program

摘　　要：The total dose radiation response of pseudo-MOS transistors fabricated in hardened and unhardened FD （fully-depleted） SIMOX （Separation by Implanted Oxygen） SOI （Silicon-on-insulator） wafers is presented. At 1 Mrad（Si） radiation dose, the threshold voltage shift of the pseudo-MOS transistor is reduced from -115.5 to -1.9 V by the hardening procedure. The centroid location of the net positive charge trapped in BOX, the hole-trap density and the hole capture fraction of BOX are also shown. The results suggest that hardened FD SIMOX SOI wafers can perform well in a radiation environment.The total dose radiation response of pseudo-MOS transistors fabricated in hardened and unhardened FD （fully-depleted） SIMOX （Separation by Implanted Oxygen） SOI （Silicon-on-insulator） wafers is presented. At 1 Mrad（Si） radiation dose, the threshold voltage shift of the pseudo-MOS transistor is reduced from -115.5 to -1.9 V by the hardening procedure. The centroid location of the net positive charge trapped in BOX, the hole-trap density and the hole capture fraction of BOX are also shown. The results suggest that hardened FD SIMOX SOI wafers can perform well in a radiation environment.

关 键 词：SOI pseudo-MOS transistor total dose radiation ion implantation 

分 类 号：TN386.1[电子电信—物理电子学] TQ342.1[化学工程—化纤工业]