一种新型硅基3C-SiC的生长方法及光谱学表征  

New Synthesis of 3C-SiC Film and Optical Characteristics Study on Silicon Substrate

作　　者：程顺昌[1] 杨治美[1] 钟玉杰[1] 何毅[2] 孙小松[3] 龚敏[1] 

机构地区：[1]四川大学物理科学与技术学院微电子实验室,成都610064 [2]四川大学分析测试中心,成都610064 [3]四川大学材料科学与技术学院,成都610064

出　　处：《光散射学报》2009年第3期251-255,共5页The Journal of Light Scattering

摘　　要：采用LPCVD技术,以CH4和H2混合气体为反应源气,在n-Si(111)衬底上生长3C-SiC晶体薄膜。H2在反应过程中作为稀释气体和运输气体,CH4作为碳源,硅源有衬底硅来提供。利用X射线衍射分析仪、场发射扫描电子显微镜、激光拉曼光谱和傅里叶变换红外光谱分别研究3C-SiC薄膜的晶相结构、表面形貌及其光谱性质。结果表明此生长方法可以成功的成长出3C-SiC薄膜。3C-SiC film was grown on n-Si （111） substrate by Low pressure chemical vapor deposition （LPCVD）. CH4 was used as the carbon source and diluted with H2, while silicon substrate was used as the silicon source. The film was characterized using various techniques, including x-ray diffraction （XRD）, scanning electron microscope （SEM）, Raman scattering spectra and Fourier transform infrared （FTIR） reflectance. The results revealed that film obtained on silicon substrate with CH4 and H2 was 3C-SiC single crystal.

关 键 词：立方碳化硅 拉曼散射光谱 傅里叶变换红外光谱 剩余射线带 

分 类 号：TN304.054[电子电信—物理电子学]