DBD-PECVD法制备CN薄膜的结构及性能研究  

Microstructures and Properties of CN Films Grown by Dielectric Barrier Discharge Plasma Enhanced Chemical Vapor Deposition

作　　者：张莲莲[1,2] 刘艳红[1] 牛金海[2] 刘东平[2] 

机构地区：[1]大连理工大学物理与光电工程学院,大连116023 [2]大连民族学院光电子技术研究所,大连116600

出　　处：《真空科学与技术学报》2009年第5期479-483,共5页Chinese Journal of Vacuum Science and Technology

摘　　要：使用自行设计的真空系统,采用介质阻挡放电等离子体增强化学气相沉积(DBD-PECVD)法,分别以CH4/N2、C2H2/N2、C2H4/N2混合气体作为反应气体,在单晶硅片上成功制备了CN薄膜。FTIR结果证实了薄膜中碳氮原子结合成化学键,Raman结果说明薄膜中含有类金刚石结构,AFM结果表明薄膜粗糙度随放电气压的升高而逐渐增大。三种混合气体沉积的CN薄膜,以CH4/N2的沉积速度最慢,薄膜表面粗糙度最小,含H量最少;C2H2/N2的沉积速度最快,薄膜表面粗糙度最大。The carbon nitride films were grown by dielectric barrier discharge plasma enhanced chemical vapor deposition（DBD-PECVD） with gas-mixtures of CH4/N2, C2H2/N2 and C2H4/N2, respectively, on silicon substrates. The microstructures and properties of the CN films were characterized with Fourier transform Infrared spectroscopy（FTIR）, Raman spectroscopy and atomic force microscopy（AFM）. The influence of the film growth conditions on the film quality was studied. Diamond-like structures and C-N bonds were observed in the films. The results show that the type of the gas mixtures and the discharge pressure strongly affect the deposition rate and the surface roughness. For example, the film deposited in the CH4/N2 gas mixture shows the lowest deposition rate and the least H contents of the three gas mixtures, whereas the one in the C2H2/N2 shows the highest deposition rate. The CN films deposited with CH4/N2 gas mixture are smoother than those deposited with both C2H2/N2 and C2H4/N2, gas mixtures.

关 键 词：碳氮薄膜 薄膜结构 介质阻挡放电 FTIR AFM RAMAN 

分 类 号：O539[理学—等离子体物理]