非平衡磁控溅射制备氮化硅薄膜及其性能研究  

Microstructures and Properties of Silicon Nitride Films Grown by Unbalanced Magnetron Sputtering

作　　者：景凤娟[1] 张琦[1] 冷永祥[1] 孙鸿[1] 杨苹[1] 黄楠[1] 

机构地区：[1]西南交通大学材料先进技术教育部重点实验室材料科学与工程学院,成都610031

出　　处：《真空科学与技术学报》2009年第5期541-545,共5页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金项目(No.30570502);教育部新世纪人才计划(NCET-06-0800);四川省杰出青年学科带头人培养资助计划(06ZQ026-015)资助

摘　　要：采用非平衡磁控溅射技术,通过改变氮气和氩气分压比P(N2)/P(Ar),在钛合金(Ti6Al4V)表面制备出不同结构及性能的氮化硅薄膜。结果显示,制备的氮化硅薄膜为非晶态结构,随着氮气分压的增加,Si-N键的含量增加,其对应的红外吸收峰逐渐变宽,并向高波数偏移。氮化硅薄膜的显微硬度、耐磨性随着P(N2)/P(Ar)的增加而先增加,当P(N2)/P(Ar)为0.25时,随着P(N2)/P(Ar)的增加,薄膜硬度及耐磨性稍有降低。氮化硅薄膜具有较好的膜/基结合力,当增大氮气和氩气分压比,薄膜的脆性随之增加。The silicon nitride films were grown by unbalanced magnetron sputtering on Ti6A14V substrates. The microstructures and properties of the films were characterized with X-my diffraction （XRD）, Fourier Transform infrared （FTIR） and conventional mechanical probes. The impacts of the film growth conditions, including the ratio of nitrogen and argon partial pressures P （N2）/P（Ar）, substrate temperature, and sputtering power, on microstmctures and properties of the films were studied. The results show that the partial pressure ratio significantly affects the properties of the films. For instance, as the P （N2）/P （Ar）ratio increases, the Si- N bond densities in the amorphous silicon nitride increases, coinciding with the gradual widening of the infrared light absorption peak, and a shift toward high wave numbers. Besides, as the ratio increases, its brittleness increases; but its micro-hardness, wear resistance, first, increases, and then decreases, peaking at a ratio of 0.25. The interfacial adhesion is fairly strong.

关 键 词：氮化硅薄膜 非平衡磁控溅射 耐磨性 结合力 

分 类 号：O484[理学—固体物理]