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机构地区:[1]华东理工大学化学工程联合国家重点实验室,上海200237
出 处:《微纳电子技术》2009年第9期561-565,共5页Micronanoelectronic Technology
基 金:上海市科委纳米技术专项资助课题(0652nm001)
摘 要:以苯甲醚为溶剂,采用旋涂法制备PMMA(聚甲基丙烯酸甲酯)转移层膜。当PMMA的质量分数为5%、旋涂速度为2000~6000r/min时,转移层膜的厚度为90~150nm,粗糙度为0.3nm,可满足纳米压印要求。采用接触角测量仪测试计算出PMMA、PS转移层膜的表面能,并通过转移层膜与压印胶之间的粘附功和界面张力的计算,评价了PMMA、PS和Si片对压印胶的润湿和粘附性能。结果表明,PMMA膜可改善压印胶在基片上的润湿铺展性能和粘附性能,而PS膜虽能改善基片的润湿铺展性能,却不利于压印胶的粘附。The polymethy lmethacrylate (PMMA) transfer layer was prepared by spin-coating method with anisole as a solvent. The spin coating of 90 - 150 nm thick PMMA films for the ultraviolet imprint lithography was examined with 5 % mass fraction of PMMA and 2 000 - 6 000 r/min spin speed, the 0.3 nm roughness of PMMA transfer layer was achieved. The surface energies of PMMA and PS films were characterized by contact angle instrument. The relationship of polar and dispersive parts between the transfer layer and UV-NIL resist was discussed based on the calculation of the adhesion work and the interracial tension. Wetting behavior and adhesion of the resists with respect to PMMA films, PS films and Si substrates were evaluated. The results show that the wetting and adhesion behavior of PMMA films to resists are improved compared with silicon substrates and PS films.
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