钕、镧掺杂氧化锌薄膜的制备及形貌  

Investigation of Structure of Nd-doped ZnO and La-doped ZnO Thin Films

作　　者：文军[1] 

机构地区：[1]渭南师范学院物理与电子工程系,陕西渭南714000

出　　处：《河北师范大学学报（自然科学版）》2009年第5期616-619,共4页Journal of Hebei Normal University：Natural Science

基　　金：陕西省教育厅科研计划(08JK287);渭南师范学院科研基金(09YKS004)

摘　　要：通过射频磁控溅射技术在Si(111)衬底上制备了Nd,La掺杂的ZnO薄膜.应用XRD分析了所制备薄膜的微结构,Nd,La掺入了ZnO晶格,没有改变ZnO薄膜的结构,薄膜为沿(100),(101)方向生长的纳米多晶结构.通过AFM观测与分析表明,Nd,La掺杂ZnO薄膜的表面形貌粗糙,呈现拱形.Nd3+离子与La3+离子4f轨道上电子数不同可能是Nd,La掺杂ZnO薄膜生长差异的主要原因.The Nd-doped and La-doped ZnO thin films were deposited on Si（111） substrate by radio frequency magnetron sputtering. The lattice structure and the surface morphology were analyzed by X-ray diffracion and atomic force microscope respectively. The results indicated that lattice structure of the thin films was not disturbed by Nd-doping and La-doped. The thin films were nano-multi-crystal which had （100）, （101 ） orientation and the surface morphology were roughness since the deformation of Nd-doped and La-doped. Due to the charges number of the Nd^3＋ ions and La^3＋ ions were not equals to the Zn^2＋ ions, the Nd-doped and La doped ZnO thin films were different.

关 键 词：ZNO薄膜 钕掺杂 镧掺杂 XRD AFM 

分 类 号：O484[理学—固体物理] TN304[理学—物理]