薄膜电阻器用磁控溅射高阻靶材  

A High Resistance Target Materials for Making Metal Thin Resistor by Magneto-sputtering Technology

作　　者：张之圣[1] 白天[1] 王秀宇[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《压电与声光》2009年第5期661-663,共3页Piezoelectrics & Acoustooptics

基　　金：天津市科技攻关培育基金资助项目(06YFGPGX08400);天津大学先进陶瓷与加工技术教育部重点实验室开放基金资助项目

摘　　要：在用磁控溅射技术制备金属膜电阻器的生产过程中,靶材非常关键,它制约着金属膜电阻器的精度、可靠性、稳定性和电阻温度系数等性能。根据理论分析,提出了高稳定性的高阻靶材的最佳成分比例。自行设计了熔炼模壳及冷却方法,有效解决了因Si元素的脆性而引发的靶材开裂问题。溅射的金属膜电阻器,其高温储存试验、寿命试验、耐湿试验均达到了国家有关标准。The target is very important for making metal thin film resistor by magneto-sputtering technology. The target determines the precision, reliability, stability and TCR of the resistor. The proportion of the material of the high resistance target has been studied and the optimal proportion has been confirmed. To avoid the craze of the target caused by the brittleness of Si element, a new mould and cooling method have been developed. The metal thin film resistor by sputtering can come up to the national standard through storage test at high temperature, life-time test and moisture proofing.

关 键 词：金属膜电阻器 溅射靶材 熔炼技术 

分 类 号：TN104[电子电信—物理电子学]