外延PbZr_(0.4)Ti_(0.6)O_3薄膜的电光效应  

The Electro-optic Effects in Epitaxial PbZr_(0.4)Ti_(0.6)O_3 Thin Films

作　　者：王英龙[1] 魏同茹[1] 褚立志[1] 刘保亭[1] 傅广生[1] 

机构地区：[1]河北大学物理科学与技术学院,河北保定071002

出　　处：《压电与声光》2009年第5期728-731,共4页Piezoelectrics & Acoustooptics

基　　金："九七三"前期研究专项基金资助项目(2007CB616910);国家自然科学基金资助项目(50572021);河北省自然科学基金资助项目(E2005000130);国家人事部留学人员择优基金资助项目(G05-06);教育部留学回国人员科研启动基金资助项目(2005-546);河北大学科研基金资助项目

摘　　要：从Landau-Devonshire唯象理论出发,通过热力学分析得到PbZr0.4Ti0.6O3薄膜的电光效应与厚度和外加电场的关系。结果表明,生长在SrTiO3衬底上的PbZr0.4Ti0.6O3薄膜,其线性电光系数和二次电光系数都随薄膜厚度的增加而增大,且在临界厚度附近趋于饱和,对50nm厚的PbZr0.4Ti0.6O3薄膜,线性电光系数和二次电光系数分别为7.2×10-11m/V和0.31×10-18m2/V2,双折射变化随外加电场改变,由线性电光效应引起的双折射变化比二次电光效应引起的双折射变化明显。The relationship between the electro-optic（EO） effect of PbZr0.4Ti0.6 O3 thin film and the film thickncss and the additional electric field has been obtained by using the thermodynamic analysis via the Landau-Devonshire＇s phenomenological theory. The results show that the linear andquadratic EO coefficients increase with the increase of film thickness and become saturated when the film thickness is close to the critical thickness of PbZr0. 4 Ti0.6 O3 thin film on SrTiO3 substrate. The linear and quadratic EO coefficients are about 7.2 × 10^-11 m/V and 0.31 × 10^-18 m^2/V^2 respectively for 50 nm PbZr0.4Ti0.6 O3 thin film. The hirefringence change depends on the electric field, and the change resulted from the linear EO effect is more prominent than that resulted from the quadratic EO effect.

关 键 词：铁电薄膜 电光效应 电光系数 

分 类 号：TN304[电子电信—物理电子学] TM221[一般工业技术—材料科学与工程]