磁隧道巨磁电阻效应及应用  

MAGNETIC TUNNEL JUNCTION MAGNETORESISTANCE AND ITS APPLICATION

作　　者：卢正启[1] 戴中生 

机构地区：[1]中国科学院物理研究所 [2]江西省上饶地区科学技术情报研究所

出　　处：《大自然探索》1998年第3期34-37,共4页Discovery of Nature

摘　　要：磁隧道磁电阻效应具有饱和磁场低、工作磁场小、磁电阻大、灵敏度高等优点，从而在计算机信息存贮和高灵敏传感器方面有着广泛的应用前景。本文着重介绍磁隧道结的原理、制备技术及应用前景。Magnetic tunnel junction magnetoresistance have widely potential applications in the information storage of computer and high sensitivity magnetic sensors as having following advantages:having low saturation field,so can it work in small magnetic field;the ratio of magnetoresistance is large,the sensitivity is high,and so onIn this paper,the principle,preparing technique and potential application of the magnetic tunnel junction are reviewed

关 键 词：磁隧道结 磁电阻效应 制备 巨磁电阻效应 应用 

分 类 号：TM271[一般工业技术—材料科学与工程] O441[电气工程—电工理论与新技术]