SiO_2和TiO_2缓冲层对柔性ITO薄膜弯曲特性的影响  

Effect of SiO_2 and TiO_2 Buffer Layers to the Bending Properties of Flexible ITO Film

作　　者：喻志农[1] 夏樊[1] 李玉琼[1] 薛唯[1] 赵志伟[1] 

机构地区：[1]北京理工大学光电学院,北京100081

出　　处：《北京理工大学学报》2009年第8期699-703,共5页Transactions of Beijing Institute of Technology

基　　金：国家部委预研项目(51302060203)

摘　　要：讨论了柔性ITO薄膜在弯曲时导电能力失效的机理及影响因素.考察了SiO2和TiO2作为无机缓冲层的加入对于柔性ITO薄膜弯曲特性的影响.实验结果及分析表明,材料间的失配系数,结合力以及薄膜缺陷是影响ITO薄膜弯曲特性的主要因素.SiO2或TiO2无机缓冲层的加入降低了ITO薄膜抗内弯折临界半径;TiO2缓冲层能够明显增加ITO薄膜的耐弯折次数.Discusses the failure and factors of dependence of the conductivity of flexible ITO films under bending behaviors, as well as the effects of inorganic buffer layers, as SiO2 and TiO2, on the bending properties. The results and analysis show that the mismatch parameters, the adhesion and the defects are three main factors affecting the bending properties. The SiO2 or TiO2 buffer layer can decrease the critical radius of ITO thin films in inward-bending; and the TiO2 buffer layer can improve the times of bending of ITO thin films.

关 键 词：柔性ITO 缓冲层 弯曲特性 

分 类 号：O484.4[理学—固体物理]