多孔硅的晶态结构与表征方法  

Crystalline Structures and Characterizations of Porous Silicon

作　　者：吕京美[1] 程璇[2] 

机构地区：[1]厦门大学化学化工学院化学系,厦门361005 [2]厦门大学材料学院材料科学与工程系特种先进材料福建省重点实验室,厦门361005

出　　处：《化学进展》2009年第9期1820-1826,共7页Progress in Chemistry

基　　金：国家自然科学基金项目(No.20433060)资助

摘　　要：多孔硅的生成过程涉及从完美硅单晶逐渐变为不完整晶体,甚至无定形结构,其结构变化取决于制备条件和硅基底的掺杂类型与浓度。多数研究者利用不同的非原位手段研究多孔硅生成过程中晶态结构的变化,进一步研究其光致发光性能。本文对不同条件下生成的多孔硅的晶态结构进行了归纳总结,比较了透射电子显微镜、X射线衍射技术及拉曼光谱技术3种表征方法的特点及其对晶态结构认识的影响,指出不同微观表征手段的局限性使得众多的报道结果相差较大。最后本文就该领域的发展趋势和急需解决的问题进行了总结。The formation of porous silicon （PSi） involves the transition from perfect monocrystalline silicon to non- perfect crystalline such as polyerystalline or even amorphous structures, depending strongly upon the fabrication conditions and the nature of silicon substrates. Significant effort has been made to employ various ex-situ methods to study crystalline transformation in order to understand the photoluminescence （PL） of PSi. This paper summarizes the crystalline structures of PSi fabricated at different conditions, and compares the advantages of various characterization techniques. TEM can directly observe the crystalline structures of PSi, but suffers difficulties in the preparation of TEM samples and the possible introduction of amorphous contents. The information of the inter-planar distance and the crystallite size of PSi can be obtained from XRD, while the pore structures （pore wall and size） based on the proposed structural model can be obtained from small angle X-ray scattering method, with more detailed information about the coordination atoms is available from X-ray absorption fine structure method. Raman spectroscopy is proved to be a non-destructive and quantitative method to characterize the microstructure of PSi when combined with the corresponding models. Finally, the current problems and future researching trends in the crystalline structures and their characterizations of PSi will be briefly mentioned.

关 键 词：多孔硅 晶态结构 微区表征 

分 类 号：O649.1[理学—物理化学] O613.7[理学—化学]