采用优化的腐蚀工艺对TiSi_2接触特性的改善  

Improvement on Contact Characteristic of TiSi_2 by Using Optimized Etching Process

作　　者：田波[1] 吴郁[1] 胡冬青[1] 亢宝位[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100124

出　　处：《北京工业大学学报》2009年第6期738-741,共4页Journal of Beijing University of Technology

基　　金：北京市教委科技发展计划资助项目(KM200510005022)

摘　　要：针对传统TiSi_2工艺中RCA1(NH_4OH:H_2O_2:H_2O)溶液对于TiN/Ti与TiSi_2的选择性不好会造成硅化物的损失、提高接触电阻的问题,提出一种采用2次选择性腐蚀的工艺方法进行改善.通过具体的工艺实验证明,与传统工艺方法相比,该工艺方法可以在保持低漏电流的前提下,有效减少TiSi_2的损失,使得方块电阻降低约18%.该工艺方法具有简单易行的特点,适用于大规模工业生产.A optimized process consisting of two-step selective etching is proposed to solve the problem that the selectivity between TiN/Ti and TiSi2 is poor with the conventional RCA1 （NH4OH：H2O2：H2O） solution and results in a loss of a substantial part of the formed silicide thickness and hence in an increase of the contact resistance. Compared to the traditional process, this process allows an important reduction of the TiSi2 thickness loss and hence, makes the reduction of the sheet resistance about 18 %. Furthermore, this process is feasible and controllable, which makes it adapt to manufacture in industry.

关 键 词：TISI2 选择性腐蚀 工艺优化 RCA1溶液 

分 类 号：TN405[电子电信—微电子学与固体电子学]